SI7455DP-T1-GE3【PDF 2/9 页】MOSFET P-CH D-S 80V PPAK 8SOIC

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Si7455DP

Vishay Siliconix

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

Δ V DS /T J

Δ V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 80

- 80

7.3

V

mV/°C

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

V GS(th)

I GSS

I DSS

V DS = V GS , I D = - 250 μA

V DS = 0 V, V GS = ± 20 V

V DS = - 80 V, V GS = 0 V

V DS = - 80 V, V GS = 0 V, T J = 55 °C

-2

-3

-4

± 100

-1

- 10

V

nA

μA

On-State Drain Current a

I D(on)

V DS ≥ 5 V, V GS = - 10 V

A

Drain-Source On-State Resistance a

Forward Transconductance a

R DS(on)

g fs

V GS = - 10 V, I D = - 10.5 A

V GS = - 6 V, I D = - 9.7 A

V DS = - 15 V, I D = - 10.5 A

0.020

0.024

30

0.025

0.029

Ω

S

Dynamic

b

Input Capacitance

C iss

5160

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 40 V, V GS = 0 V, f = 1 MHz

320

220

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 40 V, V GS = - 10 V, I D = - 10.5 A

V DS = - 40 V, V GS = - 6 V, I D = - 10.5 A

102

65

22

155

100

nC

Gate-Drain Charge

Q gd

29

Gate Resistance

Turn-On Delay Time

R g

t d(on)

f = 1 MHz

4

15

25

Ω

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

t r

t d(off)

t f

t d(on)

t r

t d(off)

t f

V DD = - 40 V, R L = 4.76 Ω

I D ? - 8.4 A, V GEN = - 10 V, R g = 1 Ω

V DD = - 40 V, R L = 4.76 Ω

I D ? - 8.4 A, V GEN = - 6 V, R g = 1 Ω

50

90

65

30

185

70

65

75

135

100

45

280

105

100

ns

ns

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode

Current

Pulse Diode Forward Current a

I S

I SM

T C = 25 °C

- 28

- 60

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I S = - 8.4 A

I F = - 8.4 A, dI/dt = 100 A/μs, T J = 25 °C

- 0.8

60

150

45

15

- 1.2

90

235

V

ns

nC

ns

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 73430

S09-0273-Rev. C, 16-Feb-09

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